Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscate mechanisms in NiO resistive memory switching but also next-generation nanoscate nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.