期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 131, 期 18, 页码 6358-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja901553z
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资金
- Grants-in-Aid for Scientific Research [20350069] Funding Source: KAKEN
The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S8C9H2)(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa.
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