Homoleptic Gadolinium Guanidinate: A Single Source Precursor for Metal-Organic Chemical Vapor Deposition of Gadolinium Nitride Thin Films

Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd[('PrN)(2)CNMe(2)}(3)] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.