期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 130, 期 44, 页码 14392-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja805090z
关键词
-
资金
- NRF-CRP award
A solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous interface allows the capacitive charging of the surface by hydroxyl (OH-) and hydroxonium ions (H3O+). The conductivity versus gate potential curve exhibits ''V'' shaped ambipolar transfer characteristics of graphene, with hole and electron mobilities of 3600 cm(2)/Vs and 2100 cm(2)/Vs, respectively. The shift of the negative gate potential with pH shows a supra-Nernstian response of 99 meV/pH. Our work points to the potential application of graphene in ultrafast and ultralow noise chemical or biological sensors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据