Electrolyte Gating in Redox-Active Tunneling Junctions-An Electrochemical STM Approach

We report on the construction of an asymmetric tunneling junction between a Au STM tip and a Au(111)-(1 x 1) substrate electrode modified with the redox-active molecule N-hexyl-N'-(6-thiohexyl)-4,4'-bipyridinium bromide (HS6V6) in an electrochemical environment. The experiments focused on the reversible one-electron transfer reaction between the viologen dication V2+ and the radical cation V+center dot. Employing the concept of electrolyte gating we demonstrate transistor- and diodelike behavior based on in situ scanning tunneling spectroscopy at constant or variable bias voltages. We derived criteria and verified that the experimental data could be represented quantitatively by a model assuming a two-step electron transfer with partial vibrational relaxation. The analysis illustrates that the magnitude of the tunneling enhancement depends on the initial redox state of HS6V6 (V2+ or V+center dot). Characteristic parameters, such as reorganization energy, potential drop, and overpotential across the tunneling gap were estimated and discussed. We present a clear discrimination between the redox-mediated enhanced and the off-resonance tunneling currents I-enh respective I-T and distinguish between electron transfer in symmetric and asymmetric Au I redox-molecule I Au configurations.