期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 130, 期 24, 页码 7528-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/ja801309g
关键词
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Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors(OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.
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