期刊
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 96, 期 6, 页码 1852-1856出版社
WILEY-BLACKWELL
DOI: 10.1111/jace.12269
关键词
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资金
- National Natural Science Foundation [51172187]
- SPDRF [20116102130002]
- 111 Program of MOE [B08040]
- Xi'an Science and Technology Foundation of China [CX1261-2, CX1261-3, XA-AM-201003]
Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of similar to 320nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability () and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E=560kV/cm and similar to 236, respectively. High-temperature stability (>75% and FOM>230 at 560kV/cm in the range from 300 to 380K) and high breakdown dielectric strength (leakage current < 1nA at 598kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.
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