High Tunability in (111)-Oriented Relaxor Pb0.8Ba0.2ZrO3 Thin Film with Antiferroelectric and Ferroelectric Two-Phase Coexistence

Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of similar to 320nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability () and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E=560kV/cm and similar to 236, respectively. High-temperature stability (>75% and FOM>230 at 560kV/cm in the range from 300 to 380K) and high breakdown dielectric strength (leakage current < 1nA at 598kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.