期刊
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 96, 期 1, 页码 146-150出版社
WILEY-BLACKWELL
DOI: 10.1111/j.1551-2916.2012.05430.x
关键词
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资金
- Mid-career Researcher Program through NRF [2011-0016790]
- MEST
- Priority Research Centers Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0093818]
We deposited (K0.5Na0.5)(Mn0.005Nb0.995)O3 (KNMN) thin films on Pt(111)/TiO2/SiO2/Si(100) substrates with a top electrode of indium tin oxide and investigated photocurrent properties in the wavelength range of 300-400 nm. Before the photocurrent measurement, the KNMN film was poled by applying a DC voltage. The photocurrents strongly depend on the wavelength of the incident photon energy. The photocurrents of the first measurement with poling in the up (-5 V) and down (+5 V) states were 21 and 3.2 nA/cm2, respectively, at 344 nm. The difference in the photocurrents in both poling directions was explained by a space charge due to an asymmetric Schottky barrier height, which was caused by an internal electric field and polarization in the KNMN thin film.
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