Rapid, Low-Temperature Synthesis of β-SiC Nanowires from Si and Graphite

beta-SiC nanowires were synthesized at a temperature as low as 150 degrees C by the reaction of Si and graphite induced by an additional reaction between Na and S. Characterization by X-ray diffraction, high-resolution transmission electron microscopy, IR spectra, and Raman spectra demonstrates the formation of curly beta-SiC nanowires with several millimeters in length and 50-70 nm in diameter. Also, a prominent peak at 387 nm is observed in the visible photoluminescence emission. Besides the temperature, the molar ratio of S to Si (or graphite) has significant influence on the synthesis of SiC at relatively low temperatures.