4.6 Article

Route to n-type doping in SnS

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APPLIED PHYSICS LETTERS
卷 106, 期 15, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4918294

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  1. MEXT Elements Strategy Initiative
  2. NEDO

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SnS is intrinsically a p-type semiconductor, and much effort has been made to attain n-type conduction. In this letter, we performed density functional theory calculations to seek an effective doping route for n-type SnS. It was found that aliovalent doping of SnS by Sb or Bi is not effective due to their high formation enthalpies; while the isovalent Pb-substitution of the Sn sites largely reduces formation enthalpies of Sn and Pb interstitials, which explain the recently demonstrated n-type conduction in the Sn1-xPbxS films fabricated under low H2S pressures. (c) 2015 AIP Publishing LLC.

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