期刊
APPLIED PHYSICS LETTERS
卷 106, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4914296
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资金
- National Natural Science Foundation of China [11374185]
- Shandong University [2013TB008]
Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period. (C) 2015 AIP Publishing LLC.
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