期刊
JOURNAL OF SYNCHROTRON RADIATION
卷 16, 期 -, 页码 143-151出版社
INT UNION CRYSTALLOGRAPHY
DOI: 10.1107/S0909049508040429
关键词
macromolecular crystallography; flux determination; silicon pin diode; absorbed dose
资金
- National Institutes of Health [GM074929, GM082250]
- US Department of Energy [DE-AC03-76SF00098]
- Lawrence Berkeley National Laboratory
Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced.
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