Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer. (C) 2015 AIP Publishing LLC.