期刊
APPLIED PHYSICS LETTERS
卷 107, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4930873
关键词
-
资金
- National Natural Science Foundation of China [61504083, 51371120, 51302174, 61306126]
- Shenzhen Engineering Laboratory for Advanced Technology of Ceramics [T201505]
- National Science Foundation of Shenzhen University [201501]
- Natural Science Foundation of SZU [000062]
- Science and Technology Commission of Shanghai Municipality [12ZR1453000]
- CAS International Collaboration and Innovation Program on High Mobility Materials Engineering, Nanshan District Key Lab for Biopolymer and Safety Evaluation [KC2014ZDZJ0001A]
The energy band alignment between HfO2/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO2 was deposited using an atomic layer deposition tool, and ML-MoS2 was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO2/ML-MoS2 interface without any treatment. With CHF3 plasma treatment, a VBO and a CBO across the HfO2/ ML-MoS2 interface were found to be 2.47 eV and 2.23 eV, respectively. The band alignment difference is believed to be dominated by the down-shift in the core level of Hf 4d and up-shift in the core level of Mo 3d, or the interface dipoles, which caused by the interfacial layer in rich of F. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据