期刊
PLASMA PROCESSES AND POLYMERS
卷 13, 期 2, 页码 258-265出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.201500058
关键词
aging; a-SiNCH thin films; ECR microwave PE-CVD; ellipsometry; FT-IR
资金
- Region Languedoc-Roussillon
- BPI France (OSEO Innovation), through the FUI-9 MISHY project [F1004017Z]
Amorphous non-oxide a-SiCxNy:H thin films have been synthesized at 300 or 500K from an Ar/HMDSN/NH3 gas mixture in a lab-scale microwaves PECVD reactor. These thin films have been characterized by FTIR spectroscopy and spectroscopic ellipsometry coupled with gas adsorption, in order to evidence the influence of PECVD synthesis conditions on the materials composition and microstructure. Deposition at high temperature (500K) was found to yield more inorganic and more compact films in comparison with those obtained at room temperature. In addition, when considering long term aging at room temperature for more than 1 month, the films synthesized at high temperature were found to be more stable toward oxidation in (humid) air.
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