期刊
JOURNAL OF SUPERCRITICAL FLUIDS
卷 44, 期 3, 页码 466-474出版社
ELSEVIER
DOI: 10.1016/j.supflu.2007.12.004
关键词
supercritical carbon di oxide thin film deposition; copper; flow reactor; Cu(hfac)(2)
We have developed a flow-type reaction system that enables independent control of each deposition parameter at a constant value. Here we studied the deposition kinetics and narrow-gap-filling of copper thin film in supercritical carbon dioxide fluids using hexafluoroacetylacetonatecopper (Cu(hfac)(2)) as a precursor. From the temperature dependence of the growth rate, the activation energy for Cu growth was determined at 0.45 +/- 0.09 eV. The dependences of the growth rate on the H-2 and Cu(hfac)(2) concentrations were studied, and an apparent rate equation was obtained. The gap-filling property was found to improve as H-2 concentration increases. The crystallographic texture of the obtained film was also studied, and (1 1 1) preferential films were obtained when the H-2 concentration was high. (c) 2007 Elsevier B.V. All rights reserved.
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