Synthesis, Crystal Growth and Epitaxial Layers Growth of FeSe0,88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System

The FeSe material was prepared from pure components under inert gas atmosphere. Typically, synthesized material was HIP-ed under pressure of 0.45 GPa of 5N purity argon with use of the High Gas Pressure Trap System (HGPTS). The thin films were obtained by epitaxial process performed on substrates. Thin layers were manufactured by mixed procedures with the use of DC sputtering on the substrate from various types of targets. The FeSe0.88 material has T (c) from 8 to 12 K. It was synthesized at high Se vapor pressure at equilibrium conditions of pressure and temperature. The used HGPTS assure the full separation of the active inner volume for synthesis or crystal growth of material and the outside gas medium. The material has been investigated by SEM, EDX, XRD, magnetic susceptibility and resistivity measurements.