4.3 Review

Operation and Modeling of Semiconductor Spintronics Computing Devices

期刊

出版社

SPRINGER
DOI: 10.1007/s10948-008-0343-y

关键词

Logic devices; Computing; Transistor; CMOS; Spintronics; Spin FET; Gain; Ferromagnetic semiconductor; Semiconductor Bloch equations; Scaling; Quantum limit; Power dissipation

向作者/读者索取更多资源

Semiconductor spintronic devices are considered from the point of view of suitability for digital logic. Functionality of earlier proposed devices is reviewed for cascadability and signal gain. Spin gain transistor, which uses electronic control of ferromagnetism in semiconductors, is treated in more detail via semiconductor Bloch equations for both localized and free-carrier magnetic moments. Dependence of the steady state magnetization and temporal switching characteristics on material parameters is determined. Finally, fundamental physical limits for spintronic devices are determined via use of an idealized model. They are compared with similar limits for electronic devices. It is found that, though spintronic devices switch slower, their switching energy is smaller, therefore they scale with size on a curve with lower power dissipation.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据