期刊
JOURNAL OF STRUCTURAL CHEMISTRY
卷 55, 期 3, 页码 456-462出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S0022476614030093
关键词
silicon carbonitride; thin films; PE CVD; X-ray photoelectron spectroscopy; IR spectroscopy
资金
- Presidium of the Russian Academy of Sciences [68, 24]
Silicon carbonitride films are synthesized by plasma enhanced chemical vapor deposition from bis(trimethylsilyl)ethylamine and helium or ammonium mixtures. The structure of chemical bonds in the films is studied by X-ray photoelectron and IR spectroscopy. The data on the main types of bonds present in silicon carbonitride films deposited under different synthesis conditions are obtained. It is shown that the use of ammonia at a low deposition temperature provides the synthesis of films with a simultaneous formation of Si-C, Si-N, and C-N bonds. The main bonds in films obtained from a bis(trimethylsilyl)ethylamine and helium mixture are Si-C and Si-N. The chemical structure of films obtained at high synthesis temperatures is close to SiC (x) regardless of the type of the additional gas used.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据