Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 degrees C of Al2O3 on oxygen-terminated boron doped (001) diamond. 'Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset Delta E-v of 1.34 +/- 0.2 eV and conduction band offset Delta E-c of 0.56 +/- 0.2 eV considering an Al2O3 energy band gap of 7,4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed. (C) 2015 AIP Publishing LLC.