期刊
APPLIED PHYSICS EXPRESS
卷 8, 期 5, 页码 -出版社
IOP Publishing Ltd
DOI: 10.7567/APEX.8.055201
关键词
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资金
- National Basic Research Program of China [2012CB933101]
- National Science Foundation [51372107, 11104122, 51202099]
In this letter, we demonstrate that few-layer orthorhombic arsenene is an ideal semiconductor. Owing to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of approximately 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and to simultaneously exhibit high directional anisotropy. All these characteristics make few-layer arsenene promising for device applications in the semiconducting industry. (C) 2015 The Japan Society of Applied Physics
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