High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

High-Hall-electron-mobility and high-performance Schottky barrier diodes for edge-defined fed-grown ((2) over bar 01) beta-Ga2O3 single crystals have been demonstrated. A high electron mobility of 886cm(2)/(V.s) at 85K was obtained. By theoretical specific scattering mechanisms, it was found that the electron mobility for >200K is limited by optical phonon scattering and that for < 100K by ionized impurity scattering. On Schottky barrier diodes with Ni contacts, the current density for the forward voltage was 70.3A/cm(2) at 2.0 V, and a nearly ideal ideality factor of 1.01 was obtained. (C) 2015 The Japan Society of Applied Physics