期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 45, 期 6, 页码 481-486出版社
WILEY-BLACKWELL
DOI: 10.1002/jrs.4482
关键词
ion irradiation; damage production; silicon carbide; Raman spectroscopy; cartography
类别
This article reports micro-Raman experiments performed on cross sections of 6H-SiC crystals irradiated with heavy ions of different energies. The results demonstrate that this technique is very powerful to quantify the damage created in the wake of energetic ions from the surface of samples down to the ion resting position. For slow ions (900-keV I), ballistic collisions lead to the amorphization of the surface region of samples. For swift ions (36-MeVW), the surface region remains crystalline and amorphization occurs around the end of the ion path. Moreover, synergistic effects between electronic and nuclear slowing down processes are put forward. The methodology used in this work may be adapted to other materials where radiation effects need to be investigated, provided that the damage created by irradiation is detectable by Raman spectroscopy. Copyright (c) 2014 John Wiley & Sons, Ltd.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据