期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 44, 期 1, 页码 70-74出版社
WILEY-BLACKWELL
DOI: 10.1002/jrs.4141
关键词
few-layer graphene; Raman scattering; ultrafast spectroscopy; coherent phonon
类别
资金
- Singapore National Research Foundation under NRF [NRF-RF2010-07, NRF-RF2009-06]
- MOE Tier 2 [MOE2009-T2-1-037]
- Nanyang Technological University [M58113004]
Few-layer graphene grown by chemical vapor deposition has been studied by Raman and ultrafast laser spectroscopy. A low-wavenumber Raman peak of similar to 120 cm-1 and a phonon-induced oscillation in the kinetic curve of electronphonon relaxation process have been observed, respectively. The Raman peak is assigned to the low-wavenumber out-of-plane optical mode in the few-layer graphene. The phonon band shows an asymmetric shape, a consequence of so-called Breit-Wigner-Fano resonance, resulting from the coupling between the low-wavenumber phonon and electron transitions. The obtained oscillation wavenumber from the kinetic curve is consistent with the detected low-wavenumber phonon by Raman scattering. The origin of this oscillation is attributed to the generation of coherent phonons and their interactions with photoinduced electrons. Copyright (C) 2012 John Wiley & Sons, Ltd.
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