期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 25, 期 32, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/25/32/325304
关键词
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资金
- Australian Research Council [DP0877208, FT0990285, DP110103802]
- DFG [SPP1285]
- BMBF [QuaHL-Rep 01BQ1035]
- Australian Research Council [DP0877208, FT0990285] Funding Source: Australian Research Council
We have studied the efficacy of (NH4)(2)S-x surface passivation on the (311) A GaAs surface. We report XPS studies of simultaneously-grown (311) A and (100) heterostructures showing that the (NH4)(2)S-x solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)(2)S-x treatment gives a 40-60x increase in photoluminescence intensity for the (100) surface, an increase of only 2-3x is obtained for the (311) A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311) A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311) A GaAs, and propose alternative strategies for passivation of this surface.
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