Conductance and shot noise in strained bilayer graphene

We explore the effect of trigonal warping and of elastic deformations on the electronic spectrum of bilayer graphene devices, on their ballistic conductance as well as on the shot noise. Uniaxial strain distorts the lattice creating a uniform fictitious gauge field in the electronic Dirac Hamiltonian which ultimately causes a dramatic reconstruction in the trigonally warped electronic spectrum, inducing topological transitions in the Fermi surface. In this paper we present results of ballistic transport in bilayer graphene in the absence and presence of strain, with particular focus on noise and the Fano factor F. The inclusion of trigonal warping preserves the pseudo-diffusive value of F D 1 = 3 at the Dirac point, as calculated in the absence of trigonal warping terms. However, the range of energies which show pseudo-diffusive transport increases by orders of magnitude compared to the results stemming out of a parabolic spectrum and the applied strain acts to increase this energy range further.