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JOURNAL OF PHYSICS-CONDENSED MATTER
卷 24, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/24/7/075301
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By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order.
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