期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 22, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/22/39/395302
关键词
-
资金
- Center on Functional Engineered Nano Architectonics (FENA)
- Interconnect Focus Center (IFC)
- AFOSR [A9550-08-1-0100]
- National Science Foundation
- RFBR [08-02-00010]
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. Special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient conditions for over a month resulted in substantially increased noise, attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据