4.5 Article

p-type doping of graphene with F4-TCNQ

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JOURNAL OF PHYSICS-CONDENSED MATTER
卷 21, 期 40, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/21/40/402001

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We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.

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