期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 47, 期 36, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/47/36/365101
关键词
oxide semiconductors; diode; rectifier; flexible electronics; RFID
资金
- Ministry of Science and Technology [101-2221-E-002-158-MY3]
- Ministry of Education of Taiwan [103R7607-2]
In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu2O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu2O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 x 10(4) at +/- 1.2 V, a high forward current of 1 A cm(-2) around 1V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu2O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics.
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