期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 47, 期 25, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/47/25/255102
关键词
ZnO; MgZnO/ZnO heterostructure; sputtering; atmospheric pressure plasma jet; flexible electronics; bend testing
资金
- National Science Council of Taiwan [NSC 102-2221-E-002-060, NSC 100-2221-E-002-151-MY3, NSC 101-2628-E-002-020-MY3]
We investigate the electromechanical properties of radio frequency (rf)-sputtered MgZnO/ZnO heterostructures on flexible polyimide (PI) and stainless steel 304 (StSt304) substrates. By subjecting ZnO to ultra-short (30-40 s) atmospheric pressure plasma jet treatment and prolonged (> 3 h) thermal annealing at 300 degrees C, highly conductive interfaces are induced in rf-sputtered MgZnO/ZnO heterostructures on flexible PI and StSt304 substrates. The electrical properties of on-StSt MgZnO/ZnO annealed at 400 degrees C for 30 min are evaluated under the inward and outward bending conditions. Furthermore, the electrical properties of on-PI MgZnO/ZnO heterostructures annealed at 300 degrees C for 3 h are examined under the bending and stretching conditions. Compared with ZnO, MgZnO/ZnO heterostructures show better electrical stability under mechanical flexing; deviations in the electrical properties of MgZnO/ZnO heterostructures occur under larger strain levels. Piezoelectric polarization is induced under flexing, resulting in an increase or decrease in the resistance of MgZnO/ZnO heterostructures.
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