期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 47, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/47/6/065302
关键词
transparent resistive random access memory; forming-free resistance switching; oxygen vacancy; Eu2O3 films; conduction mechanism
资金
- National Science Foundation [60976016]
- National Natural Science Foundation of China [11174135]
- National 973 Project [0213117005]
- State Key Program for Basic Research of China [2010CB630704]
- Foundation Co-established by the Province
- Ministry of Henan University [SBGJ090503]
- China Postdoctoral Science Foundation [2012M511250]
Fully transparent indium-tin-oxide/high-k-rare-earth-oxide Eu2O3/F-doped SnO2 devices that show stable bipolar resistance switching have been successfully fabricated. In addition to the transmittance of above 86% for visible light, high resistance ratio, good data retention and initial forming-free resistance switching behaviour were obtained in the transparent memory. The results of high-resolution spectroscopy and x-ray photoelectron spectroscopy analyses combining with the temperature dependence of resistance suggest that metallic Eu filaments are formed in the low-resistance state. Mechanism analysis indicates that the coexistence of oxygen vacancies and metallic Eu in the Eu2O3 films plays an important role in the forming-free resistive switching performance. The switching mechanism was attributed to formation/oxidation of filamentary and oxygen ion migration.
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