期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 46, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/7/074001
关键词
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For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.
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