期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 46, 期 15, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0022-3727/46/15/155101
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资金
- Kyungpook National University Research Fund
- Brain Korea 21 [BK21]
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-0005671, 2012-0000627]
- R&D programme of MKE/KETEP [2011101050017B]
- Ministry of Education, Science and Technology [R33-10055]
- IT R&D programme of MKE/KEIT (Energy Efficient Power Semiconductor Technology for Next Generation Data Center) [10038766]
- National Research Foundation of Korea [2010-0025679, 2008-0062617, 2011-0016222, R33-2012-000-10055-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The electrical characteristics of the Al2O3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O-2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaOxNy) interfacial layer is formed at Al2O3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O-2 ambient, the GaOxNy interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (V-FB) for the capacitors.
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