期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 46, 期 16, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/16/165105
关键词
-
资金
- Australian Research Council
ZnO films have been reactively deposited on sapphire substrates at 300 degrees C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (similar to 5 x 10(18) cm(-3)) and a Hall mobility of 8.0 cm(2) V-1 s(-1), making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 10(4) at +/- 2V and sensitivity to UV light.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据