Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

ZnO films have been reactively deposited on sapphire substrates at 300 degrees C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (similar to 5 x 10(18) cm(-3)) and a Hall mobility of 8.0 cm(2) V-1 s(-1), making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 10(4) at +/- 2V and sensitivity to UV light.