期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 46, 期 19, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/19/195102
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资金
- LDRD Program of the Lawrence Berkeley National Laboratory
- Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Building Technology, of the US Department of Energy under US Department of Energy [DE-AC02-05CH11231]
- National Natural Science Foundation of China [51072039, 51222205]
- PhD Programs Foundation of the Ministry of Education of China [20112302110036]
The effect of carrier concentration on the Fermi level and bandgap renormalization in over 30 indium-doped cadmium oxide (CdO : In) films with carrier concentrations ranging from 1 to 15 x 10(20) cm(-3) was studied using the two-band k . p model with electron-electron and electron-ion interactions. It is shown that the Tauc relation, which is based on parabolic valence and conduction bands, overestimates the optical bandgap in the CdO films. Theoretical calculations of the optical bandgap give good agreement with experiments by taking into account the Burstein-Moss effect for a nonparabolic conduction band and bandgap renormalization effects. The band filling and bandgap renormalization in these CdO : In films are about 0.5-1.2 eV and 0.1-0.3 eV, respectively.
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