期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 45, 期 49, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/49/495305
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资金
- RFBR [11-08-01049-a, 11-08-00539-a]
- Presidium of the RAS [24]
- Ministry of Education and Science of the Russian Federation
The interface properties of the GaInP/Ge hetero-structure solar cells were studied. It was found that an undesirable potential barrier for the majority carriers could occur at the n-GaInP/n-Ge hetero-interface during the growth of multi-junction solar cells. The potential barrier at the GaInP/Ge interface leads to S-shape behaviour of I-V curves at low temperatures, which was observed either for the single junctions or for the multi-junction solar cells containing the n-GaInP/n-Ge interface. The values of the effective barrier height and width as 0.12 +/- 0.05 eV and 45-55 nm, respectively, were estimated by admittance spectroscopy and by C-V profiling measurements.
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