期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 44, 期 23, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0022-3727/44/23/235501
关键词
-
资金
- Ministerio de Ciencia e Innovacion (Spain) [CSD2008-00023]
- Fundacion Domingo Martinez
- [MAT2008-06858-C02-01]
The properties of TiN can be gradually transformed by O-2(+) implantations in the 10-40 keV range and fluences in the 5 x 10(13)-5 x 10(16) cm(-2) range. The resulting structure consists of shallow TiNxOy (TiNO)/TiN contrasts with increased resistivity on the top layer. In fact, oxygen actively replaces nitrogen in the implanted TiN region as illustrated by Rutherford backscattering spectrometry. N substitutions and vacancies in the lattice induce structural distortions and strain generation as illustrated by x-ray diffraction, high resolution transmission electron microscopy and Raman spectroscopy. The influence of these modifications in the optical and electrical properties was characterized by spectroscopic ellipsometry and four probe resistivity measurements. The proposed process, especially at the lower energy, is liable to help in the creation of electrical/photonic structures based in shallow TiNO/TiN electric/dielectric contrasts.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据