期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 44, 期 32, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/32/325109
关键词
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资金
- Thailand Research Fund (TRF) [RMU5180025]
- Faculty of Science, Chulalongkorn university
Mobility of two-dimensional electron gases in MgZnO/ZnO heterostructures with interface roughness effects was investigated theoretically using path-integral framework. We modelled the roughness-induced fluctuation by including two major effects, i.e. the electron and polarization-induced positive charge concentrations. We showed that both effects cause the scattering potential in the in-plane direction and hence affect the 2D mobility. In this work, we treated both electron and polarization-induced positive charge concentrations as equally important factors and then calculated the electron mobility and compared with the experimental result of Mg0.2Zn0.8O/ZnO heterostructure at high-electron concentrations. We found that the fitting parameters Delta = 0.26 nm, Lambda = 2.5 nm gave good description to the mobility data. We also showed that neglecting the polarization-induced positive charge concentration led to overestimating the 2D mobility.
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