Nonlocal impact ionization and avalanche multiplication

Impact ionization and avalanche multiplication are conventionally described in terms of ionization coefficients which depend only upon the local electric field. Such a description takes no account of the effect of ionization dead space, within which the population distribution, and hence the ionization coefficient of carriers injected cool approach equilibrium with the high electric field, inhibiting ionization and reducing multiplication. This effect, which increases in importance as device dimensions are reduced, clearly benefits such high field devices as transistors by suppressing parasitic avalanche multiplication. It also improves the performance of avalanche photodiodes (APDs) by reducing the spatial randomness of impact ionization, so that the resulting excess multiplication noise is also reduced. It reduces temperature sensitivity and may also further enhance APD speed. This paper reviews these effects and some theoretical models used to describe them.