期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 43, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/31/315104
关键词
-
资金
- Presidium of the Russian Academy of Sciences
- RFBR [N10-05-00256a]
We report on a light-emitting organic field-effect transistor (LE-OFET) based on a polyfluorene (PFO)-ZnO nanoparticles film. We have analysed the behaviour of absorption, photoluminescence spectra and electroluminescence (EL) intensity of the PFO : ZnO hybrid films with different ZnO concentrations prepared in the FET configuration. We have found that the PFO : ZnO LE-OFET exhibits the current-voltage characteristics of a unipolar FET with saturation behaviour and operates in the hole accumulation mode. The FET mobility values in the PFO : ZnO films with a high ZnO concentration are close to the mobility of polycrystalline ZnO. A significant increase in the EL intensity of the hybrid films has been observed with an increase in the concentration of ZnO nanoparticles and with the application of gate voltages. The working mechanism of the LE-OFET device is discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据