期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 43, 期 13, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/13/132003
关键词
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资金
- Spanish MICINN [FIS2009-12964-C05-04]
- Consolider Ingenio [CSD2008-00023]
- Lorraine Region (France)
- NSERC
- NRC
- CIHR
- University of Saskatchewan
We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity.
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