期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 43, 期 29, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/29/295401
关键词
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资金
- 973 programme [2006CB604908, 2006CB921607]
- National Natural Science Foundation of China [60625402, 60990313]
We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.
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