期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 13, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/13/135109
关键词
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资金
- Ministry of Education, Science and Technology
- KOSEF
- WCU (World Class University)
- Ministry of Education, Science and Technology [R31-2008-000-10029-0]
- National Research Foundation of Korea [2009-0093844, R31-2008-000-10029-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Pristine graphene oxide thin film field effect transistors were fabricated on Si substrates without an additional reduction process. Graphene oxide with an optical band gap of 1.7 eV showed p-type semiconducting behaviour in air and ambipolarity under vacuum. The temperature dependence of conductance confirmed these semiconducting characteristics. I-V characteristics were well fitted to a variable range hopping model with 2 + 3 dimensionality, in good contrast to the 2D fitting in the reduced graphene oxide.
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