Enhancement of electric field properties of Pt/nanoplatelet MoO3/SiC Schottky diode

A comprehensive investigation of the electric field enhancement on a novel reverse biased Schottky contact induced by nanoplateleted morphology is presented. The phenomenon that causes the enhancement of the electric field in nanoplatelets is discussed and the equations describing it are derived. Pt/nanoplatelet MoO3/SiC Schottky diode based devices are fabricated to show the dependence of the current voltage (I-V) characteristics to the enhanced electric field at different temperatures. The devices are used as sensors as they were exposed to 1% hydrogen (H-2) gas to show the effect of free carrier density change.