期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/12/125306
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- ISTC [3401]
Growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 degrees C and the morphology of the layer depends on the temperature. At 350 degrees C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 degrees C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 degrees C shows a small shift (similar to 0.20 eV) of the room-temperature band gap energy.
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