Precursor flux-dependent microstructure of thin-film silicon prepared by hydrogen diluted silane discharge plasmas

The microstructural properties of thin-film silicon grown by plasma enhanced chemical vapour deposition from silane diluted with hydrogen have been studied in terms of gas-phase physics and chemistry. It is identified that the film microstructure is highly dependent on the hydrogen atom flux to silicon deposition flux ratio. A transition from amorphous to microcrystalline film growth takes place at a particular flux ratio. In microcrystalline film growth, the crystalline orientation changes from < 110 > to < 111 >, depending on the hydrogen atom flux. The film crystallinity increases with the hydrogen atom flux, and then the defect density and post-deposition oxidation are increased.