期刊
PHYSICAL REVIEW LETTERS
卷 115, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.115.036803
关键词
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资金
- Netherlands Foundation for Fundamental Research on Matter (FOM)
- Microsoft Corporation Station Q
- Danish National Research Foundation
- European Community through the Marie Curie Fellowship [IOF 302937]
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
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