期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 21, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/21/215304
关键词
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资金
- Korean Government [2009-0073296, MKE-RTI04-02-01]
- National Research Foundation of Korea [2009-0073296, 핵06A2801] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.
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