期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 41, 期 17, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/41/17/175107
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The Cr/Ni/Au non-alloyed ohmic contact resistance on n-type GaN is obtained by chemical surface treatment of n-type GaN films following the laser lift-off of the sapphire substrate. The effects of n-GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. Nitrogen vacancies at the n-type GaN surface are therefore produced and act as donors for electrons, improving the non-alloyed ohmic contact resistance induced by the reduction in native oxygen by the surface treatment of chemical solutions. In addition, the n-GaN surface treatment reduces the forward voltage (V(f)) of the vertical LEDs.
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